Company Profile
Official Site
HestiaPower is a high-power semiconductor design company focusing on Wide Band-gap materials.
Long-term commitment to silicon carbide (Silicon Carbide; SiC) and gallium nitride (Gallium Nitride; GaN) power semiconductor technology and product development, customer applications cover various power supplies (Power Supply), solar photovoltaic inverters (PV Inverter), New energy vehicles/electric vehicles (EV/HEV) and other high-efficiency power electronic systems.
Product Advantages And Features
SiC Schottkey Diode
．Extremely rapid reverse recovery
．Excellent surge current capability
．Low reverse leakage current at high temperature
．175°C Junction Temperature Capability
．High withstand voltage Schottky high-speed element structure
．Low-temperature dependence of device characteristics
SiC MOSFET
．Low on-resistance
．High-speed (high-frequency) switching
．High withstand voltage
Product List
| Prodyct | Spec | Package | |
|---|---|---|---|
| SiCSBD |
|||
| 650V | 2A/4A 6A/8A 10A/15A 20A/35A 40A/60A 100A |
TO-220 TO-220F TO-252 TO-263 TO-247 Bbare Chip |
|
| 120V |
2A/5A 8A/10A 16A/20A 30A/40A 60A |
TO-220 TO-220F TO-252 TO-263 TO-247 Bare Chip |
|
| SiCMOS |
|||
| 650V |
20mΩ/100A 50mΩ/50A 100mΩ/25A 200mΩ/12A |
TO-220 TO-247-3L Bare Chip QFN8*8 ( under planning) |
|
| 1200V |
30mΩ/84A 60mΩ/42A 120mΩ/21A 240mΩ/10A |
TO-247-3L BareChip TO-247-4L (under planning) |
|
| 1700V | 40mΩ, 1Ω |
TO-247-3L Bare Chip TO-247-4L (under plannng) |
|
| 3300V | 80mΩ |
BareChip |
|
| Full SiC Moudule |
|||
| 650V | 5mΩ/450A 2.5mΩ/900A |
Module |
|
| 1200v | 7.5mΩ/300A 5.63mΩ/450A 3.75mΩ/600A |
Module |
|